N. S. Averkiev

3 ta ish

Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnichiskaya ul. 26, St. Petersburg, 194021, Russia

1. Drift mobility of carriers in porous silicon

   N. S. Averkiev, L. P. Kazakova, É. A. Lebedev +1

   MaqolaSilicon Nanostructures and PhotoluminescenceSemiconductors20011 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.556185

2. Change in the energy of Jahn-Teller configurations of vacancy-donor complexes induced by uniaxial strain

   N. S. Averkiev, A. A. Gutkin, M. A. Reshchikov

   MaqolaRare-earth and actinide compoundsSemiconductors19990 iqtibos

   ABIABI:AkademIndex/openalex/1999.article.000107

3. Quantum corrections to resistance of microblock tellurium at ultralow temperatures under phonon freezing conditions

   I. I. Farbshteǐn, A. V. Chernyaev, D. V. Shamshur +1

   MaqolaSemiconductor Quantum Structures and DevicesJournal of Experimental and Theoretical Physics20100 iqtibos

   ABIABI:AkademIndex/openalex/2010.article.000407