Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: Preparation of Ge/Si and Ge∕GaAs Heterojunctions

1. Growth and photoelectric properties of graded-gap Si-(Si2)1−x(GaP)x heterostructures

   Б. Сапаев, A.S. Saidov, S. Dadamukhamedov

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics20041 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.386215

2. (IV2)1−x(III-V)x solid solutions obtained from a bounded tin melt-solution

   Б. Сапаев, М. С. Саидов, A.S. Saidov +1

   MaqolaMaterial Science and ThermodynamicsSemiconductors20041 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.628595