1.7–1.9 μm In<i>x</i>Ga1−<i>x</i>As/In<i>y</i>Al1−<i>y</i>As light-emitting diodes lattice-mismatched grown on GaAs
M.R. MurtiIMEC, Kapeldreef 75, B-3001 Leuven, BelgiumB. GrietensIMEC, Kapeldreef 75, B-3001 Leuven, BelgiumChris Van HoofIMEC, Kapeldreef 75, B-3001 Leuven, BelgiumG. BorghsIMEC, Kapeldreef 75, B-3001 Leuven, Belgium
1995en
ABI
Annotatsiya
InxGa1−xAs/InyAl1−yAs based light-emitting diodes emitting in the wavelength range 1.7–1.9 μm have been grown nonlattice matched on GaAs. Electroluminescence spectra are measured at 77 K and the injection level dependence has been studied. Mechanisms that broaden the lineshape are discussed. The position of the band gap and the electron temperature are derived by fitting the spectra. Band gap narrowing was observed as a function of the injected carrier density.
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