Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: 1.7–1.9 μm In<i>x</i>Ga1−<i>x</i>As/In<i>y</i>Al1−<i>y</i>As light-emitting diodes lattice-mismatched grown on GaAs

1. 1.94-μm light-emitting diodes for moisture-content measurements

   А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev

   MaqolaSemiconductor Lasers and Optical DevicesTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/openalex/1997.article.000158

2. Power characteristics of 2.2 μm LEDs for spectroscopic applications

   А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev

   MaqolaSpectroscopy and Laser ApplicationsTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/openalex/1997.article.000187