Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: Luminescence quenching in erbium-doped hydrogenated amorphous silicon

1. Films of a-Si:H doped with erbium from the metalorganic compound Er(HFA)3*DME, emitting at 1.54 μm

   V. B. Voronkov, V. G. Golubev, Н. И. Горшков +4

   MaqolaThin-Film Transistor TechnologiesTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/openalex/1998.article.000167

2. Effect of doping with nitrogen on electrical properties and erbium electroluminescence of a-Si:H(Er) films

   O. I. Kon’kov, E. I. Terukov, L. S. Granitsyna

   MaqolaThin-Film Transistor TechnologiesSemiconductors20010 iqtibos

   ABIABI:AkademIndex/openalex/2001.article.000249