Ushbu ishga iqtibos qilgan ishlar

1 ta ish

Ish: AFM and XRD studies of GaAs surface after anisotropic etching

1. Photophysical characteristics of microlayer photodiode pAlGaInAs(Zn)-nGaAs-Au structures

   D. M. Edgorova, F. M. Ashrapov

   MaqolaSemiconductor Quantum Structures and DevicesJournal of Engineering Physics and Thermophysics20071 iqtibos

   ABIABI:AkademIndex/openalex/2007.article.000273