Maqola

Isolation of junction devices in GaAs using proton bombardment

A.G. FoytLincoln Laboratory∗∗Operated with support from the U.S. Air Force., Massachusetts Institute of Technology, Lexington, Mass. 02173, USAW.T. LindleyLincoln Laboratory∗∗Operated with support from the U.S. Air Force., Massachusetts Institute of Technology, Lexington, Mass. 02173, USAC. M. WolfeLincoln Laboratory∗∗Operated with support from the U.S. Air Force., Massachusetts Institute of Technology, Lexington, Mass. 02173, USAJ.P. DonnellyLincoln Laboratory∗∗Operated with support from the U.S. Air Force., Massachusetts Institute of Technology, Lexington, Mass. 02173, USA

1969en

ABI

Annotatsiya

Annotatsiya mavjud emas.

Identifikatorlar

DOI: 10.1016/0038-1101(69)90001-x

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