Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: Isolation of junction devices in GaAs using proton bombardment

1. Ion doping of gallium arsenide

   П. В. Павлов, E. I. Zorin, D. I. Tetelbaum

   MaqolaPhase-change materials and chalcogenidesRussian Physics Journal19800 iqtibos

   ABIABI:AkademIndex/openalex/1980.article.000147

2. Influence of proton irradiation on the properties of a metal (Au)-anodic oxide-gallium arsenide structure

   С. В. Тихов, В. В. Мартынов, A. N. Kalinin +1

   MaqolaSemiconductor materials and interfacesRussian Physics Journal19830 iqtibos

   ABIABI:AkademIndex/openalex/1983.article.000124