V. M. Rubinov

4 works

S. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbek SSR, Tashkent

1. Quantum yield of current carriers excited by electron beams and electron penetration depth in thin GaP films

   S. A. Azimov, D. A. Aronov, V. M. Rubinov +1

   ArticleSemiconductor materials and interfacesphysica status solidi (a)19832 citations

   ABIABI:AkademIndex/openalex/1983.article.000065

2. Investigation of Current Characteristics of Thin-Film Structures Based on GaP under the Action of an Electron Beam

   V. M. Rubinov, M. Tuychiev

   ArticleChemical and Physical Properties of Materialsphysica status solidi (a)19821 citations

   ABIABI:AkademIndex/openalex/1982.article.000071

3. The influence of heating on the characteristics of the electron-excited conduction in gallium phosphide films

   S. A. Azimov, D. A. Aronov, V. M. Rubinov +1

   ArticleSemiconductor Quantum Structures and Devicesphysica status solidi (a)19831 citations

   ABIABI:AkademIndex/openalex/1983.article.000076

4. On the Mechanism of Current Passage in Gallium Phosphide Films Excited by Light or a Beam of Accelerated Electrons

   S. A. Azimov, D. A. Aronov, V. M. Rubinov +1

   ArticleSurface and Thin Film Phenomenaphysica status solidi (a)19840 citations

   ABIABI:AkademIndex/openalex/1984.article.000100