V. G. Golubev

2 works

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

1. Films of a-Si:H doped with erbium from the metalorganic compound Er(HFA)3*DME, emitting at 1.54 μm

   V. B. Voronkov, V. G. Golubev, Н. И. Горшков +4

   ArticleThin-Film Transistor TechnologiesTechnical Physics Letters19980 citations

   ABIABI:AkademIndex/openalex/1998.article.000167

2. Modified method of plasma-enhanced chemical vapor deposition of nanocrystalline silicon

   V. G. Golubev, А. В. Медведев, А. Б. Певцов +1

   ArticleSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters19980 citations

   ABIABI:AkademIndex/openalex/1998.article.000174