Films of a-Si:H doped with erbium from the metalorganic compound Er(HFA)3*DME, emitting at 1.54 μm
V. B. VoronkovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. G. GolubevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgН. И. ГоршковA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgА. В. МедведевPhysicotechnical InstituteА. Б. ПевцовA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgD.N. SuglobovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgН. А. ФеоктистовA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
Abstract
For the first time standard low-temperature (< 300 °C) plasma-enhanced chemical vapor deposition technology has been used to obtain a-Si(Er):H films emitting at 1.54 μm at room temperature. The fluorine-containing metalorganic compound Er(HFA)3*DME, exhibiting enhanced volatility and fairly good thermal stability, was used for the first time as the Er source. The establishment of photoconduction in the synthesized samples indicates that they are of satisfactory electronic quality and potentially useful for developing light-emitting diodes at 1.54 μm.
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