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Work: Films of a-Si:H doped with erbium from the metalorganic compound Er(HFA)3*DME, emitting at 1.54 μm

  1. Topics in applied physics

    Richard T. Brown

    Article19802 citations
    ABI
  2. The Physics of Hydrogenated Amorphous Silicon II

    Joannopoulos, John, Lucovsky, Gerald

    Book19842 citations
    ABI
  3. Luminescence quenching in erbium-doped hydrogenated amorphous silicon

    Jung H. Shin, R. Serna, G.N. van den Hoven +3

    Article19962 citations
    ABI
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    Other1 citations
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    Other1 citations
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