Yu. V. Zhilyaev

3 works

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

1. Behavior of epitaxial GaAs layers as α particle detectors

   V. M. Botnaryuk, Yu. V. Zhilyaev, А. М. Иванов +2

   ArticleAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19980 citations

   ABIABI:AkademIndex/openalex/1998.article.000192

2. Photoluminescence of n-GaN: Influence of chemical treatment of the surface using sulfide solutions

   Yu. V. Zhilyaev, M. E. Kompan, E. V. Konenkova +2

   ArticleGaN-based semiconductor devices and materialsTechnical Physics Letters19980 citations

   ABIABI:AkademIndex/openalex/1998.article.000263

3. Oscillations in the induced photopleochroism of In(Au)/Si thin-film structures

   V. M. Botnaryuk, Yu. V. Zhilyaev, Yu. V. Rud +1

   ArticleSilicon Nanostructures and PhotoluminescenceSemiconductors19990 citations

   ABIABI:AkademIndex/openalex/1999.article.000200