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Photoluminescence of n-GaN: Influence of chemical treatment of the surface using sulfide solutions

Yu. V. ZhilyaevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgM. E. KompanA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgE. V. KonenkovaA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. S. MokeevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgS. D. RaevskiĭA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
Technical Physics Lettersjournal1998en
ABI

Abstract

Results are presented of the photoluminescence of n-GaN (T=300 K) after chemical treatment of the surface using solutions of inorganic sulfides (Na2S and (NH4)2S) in water or isopropanol. It is shown that the maximum intensity of the photoluminescence spectrum of n-GaN increases after chemical treatment of the surface using alcohol solutions of sulfides and this increase is greater for solutions of the strong-base sulfide Na2S compared with the weak-base sulfide (NH4)2S.

Topics

GaN-based semiconductor devices and materialsGa2O3 and related materialsPhotocathodes and Microchannel Plates

Identifiers

DOI
10.1134/1.1262343

Citations and references

Cited by 09 references
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