S. D. Raevskiĭ

1 works

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

1. Photoluminescence of n-GaN: Influence of chemical treatment of the surface using sulfide solutions

   Yu. V. Zhilyaev, M. E. Kompan, E. V. Konenkova +2

   ArticleGaN-based semiconductor devices and materialsTechnical Physics Letters19980 citations

   ABIABI:AkademIndex/openalex/1998.article.000263