A. Kryganovski

1 works

Russian Academy of Sciences

1. Growth of SiC and GaN on Porous Buffer Layers

   M. G. Mynbaeva, N.S. Savkina, A. S. Tregubova +12

   ArticleGaN-based semiconductor devices and materialsMaterials science forum20000 citations

   ABIABI:AkademIndex/openalex/2000.article.000163