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A. S. Tregubova

6 works

Russian Academy of Sciences

  1. Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

    A. А. Lebedev, Anatoly M. Strel’chuk, N.S. Savkina +4

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20032 citations
    ABI

  2. Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

    N.S. Savkina, Anatoly M. Strel’chuk, L. M. Sorokin +4

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20031 citations
    ABI

  3. Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC

    Evgenia V. Kalinina, A. S. Zubrilov, N.I. Kuznetsov +4

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 citations
    ABI

  4. Growth of SiC and GaN on Porous Buffer Layers

    M. G. Mynbaeva, N.S. Savkina, A. S. Tregubova +12

    ArticleGaN-based semiconductor devices and materialsMaterials science forum20000 citations
    ABI

  5. p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization

    A. А. Lebedev, Anatoly M. Strel’chuk, D. V. Davydov +5

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20020 citations
    ABI

  6. 6H(n<sup>+</sup>)/3C(n)/6H(p<sup>+</sup>) - SiC Structures Grown by Sublimation Epitaxy

    Anatoly M. Strel’chuk, A. А. Lebedev, A. E. Cherenkov +6

    ArticleSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20050 citations
    ABI