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Growth of SiC and GaN on Porous Buffer Layers

M. G. MynbaevaRussian Academy of SciencesN.S. SavkinaRussian Academy of SciencesA. S. TregubovaRussian Academy of SciencesM. P. ScheglovRussian Academy of SciencesA. А. LebedevRussian Academy of SciencesA. S. ZubrilovRussian Academy of SciencesA. N. TitkovRussian Academy of SciencesA. KryganovskiRussian Academy of SciencesK. D. MynbaevRussian Academy of SciencesN. V. SeredovaRussian Academy of SciencesD. TsvetkovС. И. СтепановArgonne National LaboratoryA. E. CherenkovIoffe Physicotechnical Institute RASI. S. KotousovaVladimir Dmitriev
Materials science forumbook series2000en
ABI

Abstract

No abstract available.

Topics

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor TechnologiesAnodic Oxide Films and Nanostructures

Identifiers

DOI
10.4028/www.scientific.net/msf.338-342.225

Citations and references

Cited by 00 references
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