I. Yu. Strashkova

1 works

Ioffe Physico-Technical Institute, St. Petersburg, 194021, Russia

1. The quantum solution of the accumulation layer problem of n-InN

   A. A. Klochikhin, I. Yu. Strashkova

   ArticleGaN-based semiconductor devices and materialsSemiconductors20090 citations

   ABIABI:AkademIndex/openalex/2009.article.000371