Article

The quantum solution of the accumulation layer problem of n-InN

A. A. KlochikhinIoffe Physico-Technical Institute, St. Petersburg, 194021, RussiaI. Yu. StrashkovaIoffe Physico-Technical Institute, St. Petersburg, 194021, Russia

Semiconductorsjournal2009en

ABI

Abstract

The quantum theory of the accumulation layer for n-type InN crystals is developed. The Coulomb interaction and the exchange interaction in the Kohn-Sham local density approximation is considered. The applicability of the theory is demonstrated by using recent literature data. The approach developed provides more solid data on the accumulation layer parameters.

Topics

GaN-based semiconductor devices and materials Semiconductor Quantum Structures and Devices Advanced Materials and Semiconductor Technologies

Identifiers

DOI: 10.1134/s1063782609060141

Citations and references

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