I. O. Dzhumaniyazov

5 works

Tashkent University of Information Technologies, Tashkent, 100084, Uzbekistan

1. The composition dependence of the effective thickness of the base layer in Al x Ga1 − x P/GaP heterophotoconverters

   M. A. Abdukadyrov, I. O. Dzhumaniyazov, Р. А. Муминов

   ArticleSemiconductor Quantum Structures and DevicesApplied Solar Energy20111 citations

   ABIABI:AkademIndex/openalex/2011.article.000198

2. The influence of concentrated solar radiation on the properties of Ga0.7In0.3P/GaP photoconverters

   M. A. Abdukadyrov, I. O. Dzhumaniyazov, Р. А. Муминов

   Articlesolar cell performance optimizationApplied Solar Energy20110 citations

   ABIABI:AkademIndex/openalex/2011.article.000329

3. Effect of substrate crystal on mechanical stresses in heteroepitaxial photo-conversion Ga x In1 − x P/GaP structures

   M. A. Abdukadyrov, A. S. Ganiev, I. O. Dzhumaniyazov +1

   ArticleSemiconductor Quantum Structures and DevicesApplied Solar Energy20130 citations

   ABIABI:AkademIndex/openalex/2013.article.000552

4. The influence of surface treatment on the optical transparency of single GaP crystals

   M. A. Abdukadyrov, Nozima Akhmedova, A. S. Ganiev +1

   ArticleOptical and Acousto-Optic TechnologiesApplied Solar Energy20140 citations

   ABIABI:AkademIndex/openalex/2014.article.000404

5. Methods to improve output voltage and specific photoconverter electrical capacity

   M. A. Abdukadyrov, A. S. Ganiev, I. O. Dzhumaniyazov +1

   ArticleSemiconductor Quantum Structures and DevicesApplied Solar Energy20140 citations

   ABIABI:AkademIndex/openalex/2014.article.000405