Zafarjon M. Khusanov

2 works

Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan

1. Properties of Single Crystal Silicon Doped with Vanadium

   Kh.S. Daliev, Zafarjon M. Khusanov

   ArticleChalcogenide Semiconductor Thin FilmsEast European Journal of Physics20241 citations

   ABIABI:AkademIndex/openalex/2024.article.002064

2. Topological Features of Conductive Network Formation in Metal–Polymer Composites with Varying Filler Particle Sizes

   Zafarjon M. Khusanov, Fakhriddin T. Boymuratov, Sardor G'. To'ychiyev

   ArticleCarbon Nanotubes in CompositesEast European Journal of Physics20260 citations

   ABIABI:AkademIndex/openalex/2026.article.011346