Properties of Single Crystal Silicon Doped with Vanadium
Kh.S. DalievBranch of the Federal State Budgetary Educational Institution of Higher Education “National Research University MPEI”, Tashkent, UzbekistanZafarjon M. KhusanovInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan
ABI
Abstract
The paper reports the sharp increase in resistivity and the conductivity change (type) in the single-crystal silicon sample doped with vanadium. The electrical and optical properties of single-crystalline silicon were determined Hall- and four-probe measurements and infrared (IR-) spectroscopy. Relative resistance, charge carrier concentration, mobility, and concentration of optically active oxygen and carbon in the samples were determined layer-by-layer. It is shown that in silicon samples doped with vanadium the concentration of optically active oxygen atoms tends to reduce.
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