E. Popova

3 works

V. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk

1. Investigation of the electrical and photoelectric properties of manganese-doped gallium arsenide as a material for photoresistive detectors

   В. В. Антонов, А. В. Войцеховский, M. A. Krivov +6

   ArticleAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal19810 citations

   ABIABI:AkademIndex/openalex/1981.article.000112

2. Electrical and optical properties of electron-irradiated ZnGeP2

   V. N. Brudnyı̆, V. A. Novikov, E. Popova

   ArticleChalcogenide Semiconductor Thin FilmsRussian Physics Journal19860 citations

   ABIABI:AkademIndex/openalex/1986.article.000025

3. Photoionization cross sections of E levels in electron-irradiated n-type GaAs

   D. L. Budnitskii, M. A. Krivov, E. Popova

   ArticleElectron and X-Ray Spectroscopy TechniquesRussian Physics Journal19860 citations

   ABIABI:AkademIndex/openalex/1986.article.000096