Investigation of the electrical and photoelectric properties of manganese-doped gallium arsenide as a material for photoresistive detectors
В. В. АнтоновV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskА. В. ВойцеховскийV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskM. A. KrivovV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskE. V. MalisovaV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk�. N. Mel'chenkoV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk,М. П. НикифороваV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskE. PopovaV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskG. M. FuksV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskS. S. KhludkovV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk
ABI
Abstract
No abstract available.
Topics
Identifiers
Citations and references
Cited by 01 references
Metrics — AkademScholar · Coming soon