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Radiation-enhanced diffusion - defect production ratio in γ-irradiated silicon detectors

M. M. ZhitsAcademy of Sciences of the Uzbek SSR, TashkentO. A. KlimkovaAcademy of Sciences of the Uzbek SSR, TashkentO. R. NiyazovaAcademy of Sciences of the Uzbek SSR, TashkentN. V. PopovAcademy of Sciences of the Uzbek SSR, Tashkent
physica status solidi (a)journal1972en
ABI

Abstract

No abstract available.

Topics

Silicon and Solar Cell TechnologiesParticle Detector Development and PerformanceSemiconductor materials and interfaces

Identifiers

DOI
10.1002/pssa.2210100141

Citations and references

Cited by 02 references
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