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Article

Behavior of excess currents in n-type gallium arsenide tunnel diodes

A. P. VyatkinV. D. Kuznetsov Siberian Physicotechnical Institute at the State university, TomskV. A. GlushchenkoV. D. Kuznetsov Siberian Physicotechnical Institute at the State university, TomskR. P. ParkhomenkoV. D. Kuznetsov Siberian Physicotechnical Institute at the State university, TomskAne PastorV. D. Kuznetsov Siberian Physicotechnical Institute at the State university, Tomsk
Russian Physics Journaljournal1981en
ABI

Abstract

No abstract available.

Topics

Advanced Semiconductor Detectors and MaterialsSemiconductor Quantum Structures and DevicesAdvancements in Semiconductor Devices and Circuit Design

Identifiers

DOI
10.1007/bf00891607

Citations and references

Cited by 04 references
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