Works cited by this work

5 works

Work: On the Mechanism of Current Passage in Gallium Phosphide Films Excited by Light or a Beam of Accelerated Electrons

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2. Untitled

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3. Quantum yield of current carriers excited by electron beams and electron penetration depth in thin GaP films

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   ABIABI:AkademIndex/openalex/1983.article.000065

4. Investigation of Current Characteristics of Thin-Film Structures Based on GaP under the Action of an Electron Beam

   V. M. Rubinov, M. Tuychiev

   ArticleChemical and Physical Properties of Materialsphysica status solidi (a)19821 citations

   ABIABI:AkademIndex/openalex/1982.article.000071

5. The influence of heating on the characteristics of the electron-excited conduction in gallium phosphide films

   S. A. Azimov, D. A. Aronov, V. M. Rubinov +1

   ArticleSemiconductor Quantum Structures and Devicesphysica status solidi (a)19831 citations

   ABIABI:AkademIndex/openalex/1983.article.000076