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Article

The simulation of silicon doping by ion bombardment

T.S. PugachevaF.G. DzhurabekovaS.A. LemTashkentskij Gosudarstvennyj Univ., Tashkent (Uzbekistan)

1995en

ABI

Abstract

No abstract available.

Topics

Ion-surface interactions and analysis Integrated Circuits and Semiconductor Failure Analysis Silicon and Solar Cell Technologies

Citations and references

Cited by 00 references

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