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Work: Observation of a negative characteristic temperature for the threshold current of diode lasers for the 2.8 /gmm spectral range

  1. 2.7–3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers

    А. Н. Баранов, A. N. Imenkov, V. V. Sherstnev +1

    Article19944 citations
    ABI
  2. New III–V semiconductor lasers emitting near 2.6 μm

    А. Н. Баранов, V. V. Sherstnev, C. Alibert +1

    Article19962 citations
    ABI
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    Other1 citations
    ABI
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    Other1 citations
    ABI
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    Other1 citations
    ABI
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    Other1 citations
    ABI