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Polycrystalline silicon S-diode fabricated using phosphorus thermal diffusion along grain boundaries

R. AlievInstitute of Electronics, Academgorodok, 700143, Tashkent, UzbekistanB. M. AbdurakhmanovInstitute of Electronics, Academgorodok, 700143, Tashkent, UzbekistanR. BilyalovInstitute of Electronics, Academgorodok, 700143, Tashkent, Uzbekistan
Interface Sciencejournal1997en
ABI

Abstract

No abstract available.

Topics

Semiconductor materials and interfacesSilicon and Solar Cell TechnologiesSilicon Nanostructures and Photoluminescence

Identifiers

DOI
10.1007/bf00200844

Citations and references

Cited by 03 references
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