R. Bilyalov

4 works

Arifov Institute of Electronics, Uzbek Academy of Sciences, Tashkent 700143, Uzbekistan

1. Superlinearity of photocurrent in polycrystalline Si p - n structures

   B. M. Abdurakhmanov, Р. Алиев, R. Bilyalov

   ArticleSilicon Nanostructures and PhotoluminescenceSemiconductor Science and Technology19961 citations

   ABIABI:AkademIndex/openalex/2026.other.624474

2. Hydrogen passivation of defects in polycrystalline silicon solar cells

   B. M. Abdurakhmanov, R. Bilyalov

   ArticleSilicon and Solar Cell TechnologiesRenewable Energy19950 citations

   ABIABI:AkademIndex/openalex/1995.article.000030

3. Hydrogen Passivation of Defects in Electron Irradiated Polycrystalline Silicon Solar Cells

   R. Bilyalov, B. M. Abdurakhmanov

   ArticleSilicon and Solar Cell TechnologiesMRS Proceedings19950 citations

   ABIABI:AkademIndex/openalex/1995.article.000151

4. Polycrystalline silicon S-diode fabricated using phosphorus thermal diffusion along grain boundaries

   R. Aliev, B. M. Abdurakhmanov, R. Bilyalov

   ArticleSemiconductor materials and interfacesInterface Science19970 citations

   ABIABI:AkademIndex/openalex/1997.article.000236