Theoretical description of high-temperature implantation of silicon carbide with N+ and Al+ ions
D. V. KulikovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgYu. V. TrushinA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgR.A. YankovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgJ. PezoldtA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgW. SkorupaA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
Abstract
A theoretical analysis is made of the evolution of the defect structure in silicon carbide (6H-SiC) implanted with N+ and Al+ ions of various energies. Satisfactory agreement was achieved between the calculated defect distributions and the experimental data. The following kinetic parameters of silicon carbide were estimated numerically: the migration energy of interstitial silicon atoms and the recombination parameters of vacancies and interstitial sites in the carbon and silicon subsystems.
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