Article

Numerical analysis of the longitudinal electric current during resonance current flow in a n-GaAs/AlxGa1−xAs superlattice with doped quantum wells

С. И. БорисенкоV. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk State University, 634040, Tomsk, RussiaG. F. KaravaevV. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk State University, 634040, Tomsk, Russia

Semiconductorsjournal1998en

ABI

Abstract

The electric current density in the resonance electron transport along the axis of a n-GaAs/Al0.36Ga0.64As superlattice with doped quantum wells at low temperatures was analyzed numerically. The energy spectrum of the conduction-band minibands was calculated in the Kane and effective-mass approximations. The current density was calculated using the well-known formula obtained on the basis of the density-matrix method for a uniform electric field ignoring heating of the electron gas. The effect of an interaction between the minibands in an electric field on the electrical conductivity and intersubband optical absorption was studied.

Topics

Semiconductor Quantum Structures and Devices Advancements in Semiconductor Devices and Circuit Design Quantum and electron transport phenomena

Identifiers

DOI: 10.1134/1.1187435

Citations and references

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