Article

Direct bonding of silicon wafers with a diffusion layer

V. B. VoronkovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgE. G. GukA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgВ. А. КозловA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. B. ShumanA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

Technical Physics Lettersjournal1998en

ABI

Abstract

The possibility of solid-phase direct bonding of silicon wafers having p +-or n +-type diffusion layers with a high surface dopant concentration has been demonstrated for the first time.

Topics

3D IC and TSV technologies Electronic Packaging and Soldering Technologies Semiconductor materials and interfaces

Identifiers

DOI: 10.1134/1.1262055

Citations and references

Cited by 06 references

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