Electrical properties of semiconductors with pair defects
Smagul KarazhanovBeruni Physicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, 700084, UzbekistanÉ. V. KanakiBeruni Physicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, 700084, Uzbekistan
ABI
Abstract
Electrical properties of semiconductors with pair defects were investigated. It was demonstrated that the electron lifetime, resistivity, and Hall factor exhibit a pronounced nonmonotonic dependence on the pair defect concentration. A mechanism relating this phenomenon to a precise compensation of the semiconductor is suggested. It is shown that an abrupt drop of the total electron and hole density occurs in this case and the semiconductor becomes sensitive to external effects such as weak illumination intensity in the regions of the impurity and band-to-band absorption, temperature, etc.
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