É. V. Kanaki

2 works

Beruni Physicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan

1. Electrical properties of semiconductors with pair defects

   Smagul Karazhanov, É. V. Kanaki

   ArticleSilicon and Solar Cell TechnologiesSemiconductors20001 citations

   ABIABI:AkademIndex/openalex/2000.article.000183

2. Excess tunneling currents in p-Si-n-3C-SiC heterostructures

   Smagul Karazhanov, I. G. Atabaev, Timur Saliev +2

   ArticleSilicon Carbide Semiconductor TechnologiesSemiconductors20010 citations

   ABIABI:AkademIndex/openalex/2001.article.000090