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Work: Investigation of the silicon ion density during molecular beam epitaxy growth
Epitaxial growth of Ge nanoislands on Si/Ge heterostructure by ion-assisted MBE method
Х. Б. Ашуров, Flyura Djurabekova, С. Е. Максимов +3
ArticleIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms20110 citationsABI