Article

Computer simulation of ion implantation with visual observation of the implantation profiles

F.G. DjurabekovaInstitute of Applied Physics, National University of Uzbekistan, Tashkent, UzbekistanT.S. PugachevaInstitute of Applied Physics, National University of Uzbekistan, Tashkent, UzbekistanF.F. UmarovInstitute of Applied Physics, National University of Uzbekistan, Tashkent, UzbekistanS.V. YugayInstitute of Applied Physics, National University of Uzbekistan, Tashkent, Uzbekistan

2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432)conference2002en

ABI

Abstract

In the present work CASWIN-D-code is described, which allows visually observe of the surface composition change. The code is more convenient for investigation of ion implantation processes due to the possibility for obtaining the visual results for their immediate analysis. The code is very simple in use and universal for wide range of multicomponent materials. We have performed the calculation of B/sub 4/C and GaAs implantation with He/sup +/, Ar/sup +/ and Ba/sup +/ ions by means of CASWIN-D-code. The correctness of program and adequacy of used calculation model is confirmed by comparison with experiment that shows the good agreement.

Topics

Silicon and Solar Cell Technologies Industrial Vision Systems and Defect Detection Additive Manufacturing and 3D Printing Technologies

Identifiers

DOI: 10.1109/.2000.924131

Citations and references

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