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Effect of the grain boundaries on the conductivity and current transport in II–VI films

T.M. RazykovPhysical–Technical Institute, Scientific Association “Physics-Sun”, 2B G. Mavlyanov Street, Tashkent 700084, UzbekistanSmagul KarazhanovPhysical–Technical Institute, Scientific Association “Physics-Sun”, 2B G. Mavlyanov Street, Tashkent 700084, UzbekistanA. Yu. LeĭdermanPhysical–Technical Institute, Scientific Association “Physics-Sun”, 2B G. Mavlyanov Street, Tashkent 700084, UzbekistanN.F. KhusainovaPhysical–Technical Institute, Scientific Association “Physics-Sun”, 2B G. Mavlyanov Street, Tashkent 700084, UzbekistanK.M. KouchkarovPhysical–Technical Institute, Scientific Association “Physics-Sun”, 2B G. Mavlyanov Street, Tashkent 700084, Uzbekistan
Solar Energy Materials and Solar Cellsjournal2006en
ABI

Abstract

No abstract available.

Topics

Chalcogenide Semiconductor Thin FilmsSemiconductor Quantum Structures and DevicesQuantum Dots Synthesis And Properties

Identifiers

DOI
10.1016/j.solmat.2006.02.025

Citations and references

Cited by 013 references
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