Dependence of the divacancy concentration on the germanium content in Si1 − x Ge x alloys under irradiation by fast and slow neutrons
М. С. СаидовPhysicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlanova 2B, Tashkent, 700084, UzbekistanS. L. LutpullaevPhysicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlanova 2B, Tashkent, 700084, UzbekistanА. YusupovPhysicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlanova 2B, Tashkent, 700084, UzbekistanI. G. AtabaevPhysicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlanova 2B, Tashkent, 700084, UzbekistanLyudmila I. KhirunenkoInstitute of Physics, National Academy of Sciences of Ukraine, pr. Nauki 46, Kiev, 03028, UkraineN. A. MatchanovPhysicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlanova 2B, Tashkent, 700084, UzbekistanDilmurod SaidovPhysicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlanova 2B, Tashkent, 700084, UzbekistanM. U. HajievPhysicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlanova 2B, Tashkent, 700084, Uzbekistan
ABI
Abstract
The concentration of divacancies formed in Si1 − x Ge x solid solutions under irradiation by fast and slow neutrons is investigated as a function of the germanium content. It is demonstrated that the role of annihilation of primary radiation-induced defects on germanium atoms in the compounds under investigation decreases upon irradiation by fast and slow neutrons.
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