Photophysical characteristics of microlayer photodiode pAlGaInAs(Zn)-nGaAs-Au structures
D. M. EdgorovaPhysical-Engineering Institute, Physics-Sun Research and Production Association, Academy of Sciences of the Republic of Uzbekistan, 26 Mavlyanov Str., Tashkent, 700084, UzbekistanF. M. AshrapovPhysical-Engineering Institute, Physics-Sun Research and Production Association, Academy of Sciences of the Republic of Uzbekistan, 26 Mavlyanov Str., Tashkent, 700084, Uzbekistan
ABI
Abstract
No abstract available.