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D. M. Edgorova

7 works

Tashkent State Technical University, Tashkent, Republic of Uzbekistan

  1. Bilaterally Sensitive Photodiode Structures in the System Gallium Arsenide–Cadmium Sulfide

    Kutbiddin Ilovitddinovich Vakhobov, A. V. Karimov, Abdumalik Gaibov +2

    ArticleAdvanced Semiconductor Detectors and MaterialsJournal of Engineering Physics and Thermophysics20031 citations
    ABI

  2. Influence of the thickness of the base region of structures with a Schottky barrier on their current and photoelectric characteristics

    D. M. Edgorova

    ArticleSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20071 citations
    ABI

  3. Photophysical characteristics of microlayer photodiode pAlGaInAs(Zn)-nGaAs-Au structures

    D. M. Edgorova, F. M. Ashrapov

    ArticleSemiconductor Quantum Structures and DevicesJournal of Engineering Physics and Thermophysics20071 citations
    ABI

  4. A method for determining the thermal EMF and thermal conductivity

    D. M. Edgorova, S. S. Dzhakhanov, A. V. Karimov +1

    ArticleElectric Power Systems and ControlInstruments and Experimental Techniques20060 citations
    ABI

  5. Functional possibilities of Ag-N 0AlGaAs-n +GaAs-n 0GaInAs-au structures with an isotype base region

    A. V. Karimov, D. M. Edgorova, F. A. Giyasova +1

    ArticleSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20080 citations
    ABI

  6. Photocurrent amplification effect of the fet gate p–n junction

    D. M. Edgorova

    ArticlePhotoreceptor and optogenetics researchJournal of Engineering Physics and Thermophysics20090 citations
    ABI

  7. Features of producing an ohmic contact to frontal surfaces of photoconversion structures

    A. V. Karimov, D. M. Edgorova, A. Z. Rakhmatov +1

    ArticleSemiconductor Quantum Structures and DevicesApplied Solar Energy20120 citations
    ABI