Homogeneity of high-resistivity p-Si1 − x Ge x 〈Au〉 crystals
I. G. AtabaevFizika-Solntse Research and Production Association, Physicotechnical Institute, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2b, Tashkent, 700084, UzbekistanN. A. MatchanovFizika-Solntse Research and Production Association, Physicotechnical Institute, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2b, Tashkent, 700084, UzbekistanÉ. N. BakhranovFizika-Solntse Research and Production Association, Physicotechnical Institute, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2b, Tashkent, 700084, UzbekistanM. U. KhazhievFizika-Solntse Research and Production Association, Physicotechnical Institute, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2b, Tashkent, 700084, Uzbekistan
ABI
Abstract
p-Si1 − x Ge x crystals have been diffusion-doped with gold. Gold diffusion in the p-Si1 − x Ge x 〈Au〉 samples and their electrical properties have been studied. The results demonstrate that the highest gold concentration in the crystals can be achieved in the temperature range 1000–1050°C. An expression has been derived which indicates that, all other factors being the same, compensation with Au, an amphoteric impurity, insures better homogeneity compared to codoping with acceptor and donor impurities. The hole concentration homogeneity in gold-compensated samples is at the same level as or even better than that in the uncompensated material.
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