Distribution of electron density of states in allowed bands and interband absorption in amorphous semiconductors
S. ZainobidinovAndijan State University, Andijan, 710020, UzbekistanР. Г. ИкрамовNamangan State University, Namangan, 716019, UzbekistanRavshan ZhalalovNamangan State University, Namangan, 716019, UzbekistanMashkhura A. NuritdinovaNamangan State University, Namangan, 716019, Uzbekistan
ABI
Abstract
Different types of electronic transitions and the corresponding spectral characteristics of the absorption coefficient of amorphous semiconductors, where the energy of absorbed photons exceeds the mobility band gap, have been investigated. Partial spectral characteristics of the absorption coefficient and, correspondingly, the distributions of the electron density of the states involved in these optical transitions are obtained for the case where the electron densities of states in the allowed bands and the tails of these bands change with energy according to the power and exponential laws, respectively. The conditions for the occurrence of a peak in the spectral characteristic of the interband absorption coefficient are determined.
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