Article

Investigation of the hot side contacts to nanostructured LASTt(T) material. Part I

N. A. MatchanovCrystal Growth Laboratory, Physical Technical Institute of SPA “Physics-Sun” Uzbek Academy of Sciences, Tashkent, UzbekistanMuhammad FarhanElectrical and Computer Engineering Department, Michigan State University, East Lansing, MI, USAJonathan D’AngeloElectrical and Computer Engineering Department, Michigan State University, East Lansing, MI, USAE. J. TimmElectrical and Computer Engineering Department, Michigan State University, East Lansing, MI, USATimothy P. HoganElectrical and Computer Engineering Department, Michigan State University, East Lansing, MI, USAHarold SchockMechanical Engineering Department, Michigan State university, East Lansing, MI, USAEldon D. CaseChemical Engineering and Materials Science Department, Michigan State University, East Lansing, MI, USAMercouri G. KanatzidisChemistry Department, Northwestern University, Evanston, IL, USA

Applied Solar Energyjournal2011en

ABI

Abstract

Results on fabrication and characterization of metal hot side electrical contacts to nanostructured AgPb m SbTe2 + m and Ag(PbSn) m SbTe2 + m materials by using SnTe diffusion bonding are presented.

Topics

Advanced Thermoelectric Materials and Devices Chalcogenide Semiconductor Thin Films Semiconductor materials and interfaces

Identifiers

DOI: 10.3103/s0003701x11020137

Citations and references

Cited by 1 15 references

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