Investigation of the hot side contacts to nanostructured LASTt(T) material. Part I
N. A. MatchanovCrystal Growth Laboratory, Physical Technical Institute of SPA “Physics-Sun” Uzbek Academy of Sciences, Tashkent, UzbekistanMuhammad FarhanElectrical and Computer Engineering Department, Michigan State University, East Lansing, MI, USAJonathan D’AngeloElectrical and Computer Engineering Department, Michigan State University, East Lansing, MI, USAE. J. TimmElectrical and Computer Engineering Department, Michigan State University, East Lansing, MI, USATimothy P. HoganElectrical and Computer Engineering Department, Michigan State University, East Lansing, MI, USAHarold SchockMechanical Engineering Department, Michigan State university, East Lansing, MI, USAEldon D. CaseChemical Engineering and Materials Science Department, Michigan State University, East Lansing, MI, USAMercouri G. KanatzidisChemistry Department, Northwestern University, Evanston, IL, USA
ABI
Аннотация
Results on fabrication and characterization of metal hot side electrical contacts to nanostructured AgPb m SbTe2 + m and Ag(PbSn) m SbTe2 + m materials by using SnTe diffusion bonding are presented.
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Показатели — AkademScholar · Скоро