Article

Indium sputtering upon bombardment with cluster ions

С. Н. МорозовArifov Institute of Electronics, Uzbekistan Academy of Sciences, Tashkent, 100125, UzbekistanУ. Х. РасулевArifov Institute of Electronics, Uzbekistan Academy of Sciences, Tashkent, 100125, Uzbekistan

Bulletin of the Russian Academy of Sciences Physicsjournal2012en

ABI

Abstract

A surface-ionization method is developed for measuring the integral yields of neutral particles sputtered under the effect of ion bombardment. An investigation is performed to compare the integral yield of particles sputtered upon bombarding indium with Bi + cluster ions (m = 1–7) in the energy range of 2–10 keV and the secondary ion emission under bombardment with Bi + cluster ions (m = 1–5) in the energy range of 6–18 keV. A nonadditive increase in the indium sputtering coefficient is observed with an increasing number of atoms in the bombarding clusters.

Topics

Ion-surface interactions and analysis Integrated Circuits and Semiconductor Failure Analysis Nuclear Physics and Applications

Identifiers

DOI: 10.3103/s106287381205019x

Citations and references

Cited by 2 13 references

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