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Works cited by this work

9 works

Work: Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure

  1. Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe

    M. E. Levinshteĭn, Sergey Rumyantsev, M. S. Shur

    Book20012 citations
    ABI

  2. Fabrication of 6H-SiC light-emitting diodes by a rotation dipping technique: Electroluminescence mechanisms

    M. Ikeda, Tomokatsu Hayakawa, Shin-ichi Yamagiwa +2

    Article19792 citations
    ABI

  3. High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

    Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20042 citations
    ABI

  4. Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures

    Anatoly M. Strel’chuk, Evgenia V. Kalinina, Andrey O. Konstantinov +1

    ArticleSilicon and Solar Cell TechnologiesMaterials science forum20052 citations
    ABI

  5. Temperature coefficient of the energy gap of β-silicon carbide

    Richard Dalven

    Article19652 citations
    ABI

  6. Free exciton luminescence in 3C, 4H, 6H, and 15R SiC

    M. Ikeda, H. Matsunami

    Article19802 citations
    ABI

  7. Untitled

    Other1 citations
    ABI

  8. Untitled

    Other1 citations
    ABI

  9. Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure

    Anatoly M. Strel’chuk, A. А. Lebedev, N.S. Savkina +1

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20071 citations
    ABI