Article

The effect of inhomogeneity of recombination centers’ density profile on photovoltaic cell parameters

A. Yu. LeĭdermanNPO “Fizika-Solntse,” Institute of Physics and Technology, Uzbekistan Academy of Sciences, Tashkent, 100000, UzbekistanR. A. AyukhanovNPO “Fizika-Solntse,” Institute of Physics and Technology, Uzbekistan Academy of Sciences, Tashkent, 100000, UzbekistanA. B. KarshievNPO “Fizika-Solntse,” Institute of Physics and Technology, Uzbekistan Academy of Sciences, Tashkent, 100000, Uzbekistan

Applied Solar Energyjournal2014en

ABI

Abstract

The effect the linear dependence of recombination center density along the coordinate on photovoltaic cell parameters is analyzed. It is shown that an increase of the recombination centers’ density from an interface with a p-n junction in the direction of the rear contact causes the saturation current and reduces the open-circuit voltage, while a reduction of the recombination center density along the length of the base in the direction of the rear contact causes the open-circuit voltage.

Topics

Silicon and Solar Cell Technologies Chalcogenide Semiconductor Thin Films Semiconductor materials and interfaces

Identifiers

DOI: 10.3103/s0003701x14010095

Citations and references

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